Spin gating electrical current

Details Spin gating electrical current Spin gating electrical current

2012-03-12

arxiv.org/abs/1203.2439v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.

Affiliated with

Also associated with

No associations

Rating

Spin gating electrical current does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin gating electrical current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin gating electrical current will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-488104