Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

Details Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

2003-12-10

arxiv.org/abs/cond-mat/0312243v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

34 pages, PDF file

Scientific paper

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.

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