Physics – Condensed Matter – Materials Science
Scientific paper
2005-07-19
Appl. Phys. Lett. 87, 212501 (2005)
Physics
Condensed Matter
Materials Science
14 pages, 3 figures
Scientific paper
10.1063/1.2132526
We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour.
Barthelemy Agnes
Bibes Manuel
Bouzehouane Karim
Contour Jean-Pierre
Garcia Valerie
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