Spin Dependent Tunneling in FM|semiconductor|FM structures

Details Spin Dependent Tunneling in FM|semiconductor|FM structures Spin Dependent Tunneling in FM|semiconductor|FM structures

2005-09-21

arxiv.org/abs/cond-mat/0509561v1

J. Appl. Phys. 99, 08K302 (2006)

Physics

Condensed Matter

Materials Science

Accepted for publication in MMM'05 Proceedings. 7 pages, 5 figures

Scientific paper

10.1063/1.2151805

Here we show that ordinary band structure codes can be used to understand the mechanisms of coherent spin-injection at interfaces between ferromagnets and semiconductors. This approach allows the screening of different material combinations for properties useful for obtaining high tunneling magnetoresistance (TMR). We used the Vienna Ab-initio Simulation Code (VASP) to calculate the wave function character of each band in periodic epitaxial Fe(100)|GaAs(100) and Fe(100)|ZnSe(100) structures. It is shown that Fe wave functions of different symmetry near Fermi energy decay differently in the GaAs and ZnSe.

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