Spin-dependent transport through magnetic nanojunctions

Details Spin-dependent transport through magnetic nanojunctions Spin-dependent transport through magnetic nanojunctions

2004-12-19

arxiv.org/abs/cond-mat/0412518v2

Cent. Eur. J. Phys. 4(1), pp. 30 - 41 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

Coherent electronic transport through a molecular device is studied using non-equilibrium Green's function (NEGF) formalism. Such device is made of a carbon nanowire which is connected to ferromagnetic electrodes. The molecule itself is described with the help of Hubbard model (Coulomb interactions are treated by means of the Hartree-Fock approximation), while the coupling to the electrodes is modeled through the use of a broad-band theory. It was shown that magnetoresistance varies periodically with increasing the length of atomic wire (in the linear response regime) and oscillates with increasing of bias voltage (in the nonlinear response regime). Since the TMR effect for analyzed structures is predicted to be large (tens of percentage), considered junctions seem to be suitable for application as a magnetoresistive elements in the future electronic circuits.

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