Spin-dependent transport in the p-type ultra-narrow silicon quantum well

Details Spin-dependent transport in the p-type ultra-narrow silicon quantum well Spin-dependent transport in the p-type ultra-narrow silicon quantum well

2006-08-29

arxiv.org/abs/cond-mat/0608628v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 8 figures

Scientific paper

We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.

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