Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

Details Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

2007-05-08

arxiv.org/abs/0705.1123v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages with 3 pictures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.2751132

A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.

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