Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures

Details Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures

2005-09-02

arxiv.org/abs/cond-mat/0509067v1

Physica E 27 (2005) 462

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 6 figures

Scientific paper

10.1016/j.physe.2005.01.015

Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields. The numerical results show that the ZnMnSe layers, which act as spin filters, polarize the electric currents. Variation of thickness of the central ZnSe layer shifts the resonant levels and exhibits an oscillatory behavior in spin current densities. It is also shown that the spin polarization of the tunneling current in geometrical asymmetry of the heterostructure where two ZnMnSe layers have different Mn concentrations, depends strongly on the thickness and the applied bias.

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