Spin-dependent resonant tunneling in symmetrical double-barrier structure

Details Spin-dependent resonant tunneling in symmetrical double-barrier structure Spin-dependent resonant tunneling in symmetrical double-barrier structure

2004-10-08

arxiv.org/abs/cond-mat/0410198v1

Phys. Rev. B 71, 155313 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.71.155313

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.

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