Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

Details Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

2010-08-08

arxiv.org/abs/1008.1403v2

Phys. Rev. B 83, 121304(R) (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%.

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