Spin-Coated Erbium-Doped Silica Sol-Gel Films on Silicon

Details Spin-Coated Erbium-Doped Silica Sol-Gel Films on Silicon Spin-Coated Erbium-Doped Silica Sol-Gel Films on Silicon

2012-02-03

arxiv.org/abs/1202.0777v1

Physics

Condensed Matter

Materials Science

9 pages, 3 figures, 36 references, TMS 2012 Conference

Scientific paper

This work reports optical functionality contained in, as well as and produced by, thin film coatings. A sol-gel process, formulated with precursor active ingredients of erbium oxide and tetraethylorthosilicate (TEOS), was used for spin-coating thin (~130 nm) erbium-doped (~6 at. %) silica films on single-crystal silicon. Annealed films produce infrared emission in the 1.5-micron band from erbium ions in the film, as well as greatly enhancing (~100X) band-gap emission from the underlying silicon. The distinctly different mechanisms for the two modes of optical activities are interpreted in terms of optical emission theory and modeling; prospects for opto-electronic applications are discussed.

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