Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Details Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

2012-01-26

arxiv.org/abs/1201.5552v1

Appl. Phys. Express 5, 023003 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Appl. Phys. Express

Scientific paper

10.1143/APEX.5.023003

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.

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