Spatially resolved THz response as a characterization concept for nanowire FETs

Details Spatially resolved THz response as a characterization concept for nanowire FETs Spatially resolved THz response as a characterization concept for nanowire FETs

2007-06-11

arxiv.org/abs/0706.1417v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum approach, taking quantization and Coulomb interaction effects into account. The obtained simulation results demonstrate the capabilities of the proposed technique which go beyond the limitations of standard characterization methods.

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