Spatially extended nature of resistive switching in perovskite oxide thin films

Details Spatially extended nature of resistive switching in perovskite oxide thin films Spatially extended nature of resistive switching in perovskite oxide thin films

2006-01-19

arxiv.org/abs/cond-mat/0601451v1

Applied Physics Letters, 89 (2006) 063507

Physics

Condensed Matter

Strongly Correlated Electrons

11 pages, 3 figures

Scientific paper

10.1063/1.2236213

We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short pulse voltage switching conditions. It is important for future nanoscale non-volatile memory device applications.

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