Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

Details Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

2011-06-17

arxiv.org/abs/1106.3423v1

Physics

Condensed Matter

Materials Science

2 pages, 1 figure

Scientific paper

It has been shown that during thermal treatments of silicon layers
preamorphized by germanium implantation and then implanted with boron ions the
transport of impurity atoms occurs right up to a temperature of 850^{\circ}C
due to migration of the nonequilibrium boron interstitials.

Affiliated with

Also associated with

No associations

Rating

Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-695794