Skyrmion Lattice in a Doped Semiconductor

Details Skyrmion Lattice in a Doped Semiconductor Skyrmion Lattice in a Doped Semiconductor

2009-03-16

arxiv.org/abs/0903.2587v1

Phys. Rev. B (R) 81, 041203 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevB.81.041203

We report a comprehensive small angle neutron scattering study (SANS) of the magnetic phase diagram of the doped semiconductor Fe_{1-x}Co_{x}Si for x=0.2 and 0.25. For magnetic field parallel to the neutron beam we observe a six-fold intensity pattern under field-cooling, which identifies the A-phase of Fe_{1-x}Co_{x}Si as a skyrmion lattice. The regime of the skyrmion lattice is highly hysteretic and extents over a wide temperature range, consistent with the site disorder of the Fe and Co atoms. Our study identifies Fe_{1-x}Co_{x}Si is a second material after MnSi in which a skyrmion lattice forms and establishes that skyrmion lattices may also occur in strongly doped semiconductors.

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