Size of Orbital Ordering Domain Controlled by the Itinerancy of the 3d Electrons in a Manganite Thin Film

Details Size of Orbital Ordering Domain Controlled by the Itinerancy of the 3d Electrons in a Manganite Thin Film Size of Orbital Ordering Domain Controlled by the Itinerancy of the 3d Electrons in a Manganite Thin Film

2009-03-10

arxiv.org/abs/0903.1687v1

Phys. Rev. B 79, 220403(R) (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 4 figures

Scientific paper

10.1103/PhysRevB.79.220403

An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film Nd$_{0.5}$Sr$_{0.5}$MnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 180K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A-type), and the other has a small itinerancy (CE-type), while the lattice distortions they cause are almost equal. Our x ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the electronic states of the LT phases.

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