Size dependent thermoelectric properties of silicon nanowires

Details Size dependent thermoelectric properties of silicon nanowires Size dependent thermoelectric properties of silicon nanowires

2009-08-12

arxiv.org/abs/0908.1609v2

Applied Physics Letters 95,063102 (2009)

Physics

Condensed Matter

Materials Science

13 pages, 4 figures

Scientific paper

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% 29Si doping (28Si0.529Si0.5 NW), the ZT can be increased by 31%.

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