Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Details Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

2010-02-19

arxiv.org/abs/1002.3736v2

Appl. Phys. Lett. 96, 142107 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3380821

The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B = 0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.

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