Single-parameter quantized charge pumping in high magnetic fields

Details Single-parameter quantized charge pumping in high magnetic fields Single-parameter quantized charge pumping in high magnetic fields

2008-11-07

arxiv.org/abs/0811.1121v1

Appl. Phys. Lett. 94, 012106 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

This article has been submitted to Applied Physics Letters

Scientific paper

10.1063/1.3063128

We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.

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