Single-electron transistor effect in a two-terminal structure

Details Single-electron transistor effect in a two-terminal structure Single-electron transistor effect in a two-terminal structure

1997-11-28

arxiv.org/abs/cond-mat/9711311v1

JETP Lett,v.66(7),pp.540-545,(1997). Pis'ma ZhETF,v.66(7),pp.507-511,(1997).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures

Scientific paper

10.1134/1.567564

A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined between tunnel barriers like a nanometer-sized quantum dot or a macromolecule probed with a tunneling microscope), where it is impossible to provide a gate electrode for control of the tunnel current.

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