Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Details Single-electron quantum dot in Si/SiGe with integrated charge-sensing Single-electron quantum dot in Si/SiGe with integrated charge-sensing

2007-10-19

arxiv.org/abs/0710.3725v3

Appl Phys Lett (2007) vol. 91 pp. 213103

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

Scientific paper

10.1063/1.2816331

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.

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