Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-12-26
Phys. Rev. B 83, 075401 (2011)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
16 pages, 8 figures
Scientific paper
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate equations theory developed in parallel with the experiment.
Glazman Leonid I.
Golovach Vitaly N.
Houzet Manuel
Jehl Xavier
Pierre Mandrou
No associations
LandOfFree
Single-dopant resonance in a single-electron transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Single-dopant resonance in a single-electron transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-dopant resonance in a single-electron transistor will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-22295