Single domain transport measurements of C60 films

Details Single domain transport measurements of C60 films Single domain transport measurements of C60 films

2002-06-13

arxiv.org/abs/cond-mat/0206221v1

Physics

Condensed Matter

Superconductivity

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.67.033410

Thin films of potassium doped C60, an organic semiconductor, have been grown on silicon. The films were grown in ultra-high vacuum by thermal evaporation of C60 onto oxide-terminated silicon as well as reconstructed Si(111). The substrate termination had a drastic influence on the C60 growth mode which is directly reflected in the electrical properties of the films. Measured on the single domain length scale, these films revealed resistivities comparable to bulk single crystals. In situ electrical transport properties were correlated to the morphology of the film determined by scanning tunneling microscopy. The observed excess conductivity above the superconducting transition can be attributed to two-dimensional fluctuations.

Affiliated with

Also associated with

No associations

Rating

Single domain transport measurements of C60 films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Single domain transport measurements of C60 films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single domain transport measurements of C60 films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-690021