Single crystal growth of YbRh2Si2 and YbIr2Si2

Details Single crystal growth of YbRh2Si2 and YbIr2Si2 Single crystal growth of YbRh2Si2 and YbIr2Si2

2011-12-22

arxiv.org/abs/1112.5251v1

Physics

Condensed Matter

Strongly Correlated Electrons

Invited paper for the Symposium on `Design, Discovery and Growth of Novel Materials' in the Philosophical Magazine

Scientific paper

We report on the single crystal growth of the heavy-fermion compounds YbRh2Si2 and YbIr2Si2 using a high-temperature indium-flux technique. The optimization of the initial composition and the temperature-time profile lead to large (up to 100 mg) and clean (\rho_0=0.5 \mu\Omega cm) single crystals of YbRh2Si2. Low-temperature resistivity measurements revealed a sample dependent temperature exponent below 10 K, which for the samples with highest quality deviates from a linear-in-T behaviour. Furthermore, we grew single crystals of the alloy series Yb(Rh_(1-x)Ir_x)2Si2 with 0

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