Single-charge escape processes through a hybrid turnstile in a dissipative environment

Details Single-charge escape processes through a hybrid turnstile in a dissipative environment Single-charge escape processes through a hybrid turnstile in a dissipative environment

2010-10-11

arxiv.org/abs/1010.2168v1

Physics

Condensed Matter

Superconductivity

Submitted to New Journal of Physics 2010

Scientific paper

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.

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