Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO

Details Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO

2007-08-02

arxiv.org/abs/0708.0416v2

Phys. Rev. Lett. 100, 046404 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures, Phys. Rev. Lett., published version; different behavior of Gd impurities and O defects clarified

Scientific paper

10.1103/PhysRevLett.100.046404

We present a general framework to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, in particular the doping dependence of the Curie temperature. The existence of correlation-induced local moments on the impurity sites is essential for this description.

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