Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

Details Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

2010-02-26

arxiv.org/abs/1002.5035v1

Journal of Applied Physics (Vol.108, Issue 8), 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

31 pages, 14 figures, submitted to Journal of Applied Physics

Scientific paper

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues.

Affiliated with

Also associated with

No associations

Rating

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-290145