Physics – Condensed Matter – Materials Science
Scientific paper
2011-08-14
Sci China Phys Mech Astron August (2011) Vol. 54 No. 8. 1466-1470
Physics
Condensed Matter
Materials Science
8 pages 6figures, 1 tables
Scientific paper
10.1007/s11433-011-4399-5
The P+ {\alpha}-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 {\mu}m to 300 {\mu}m. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ {\alpha}-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ {\alpha}-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.
Chen AQing
Shao QingYi
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