Physics – Condensed Matter – Materials Science
Scientific paper
2008-08-08
Physics
Condensed Matter
Materials Science
17 pages, 5 figures, 1 table
Scientific paper
The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state conditions specifying such parameters of the process as the temperature and/or the thickness of the growth space it is possible to obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of the content of P towards the surface of the layer that possess the composition gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was also shown that control of the composition of ternary solid solutions at liquid phase electroepitaxy can be realized by use of unsteady state electric field.
Baganov Ye. A.
Krasnov V. A.
Shutov S. V.
Tsybulenko V. V.
No associations
LandOfFree
Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-29816