Simple Estimation of X- Trion Binding Energy in Semiconductor Quantum Wells

Details Simple Estimation of X- Trion Binding Energy in Semiconductor Quantum Wells Simple Estimation of X- Trion Binding Energy in Semiconductor Quantum Wells

2005-02-13

arxiv.org/abs/cond-mat/0502300v1

Eur. Phys. J. B 47, 541-547 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

8 pages, 3 Postscript figures

Scientific paper

10.1140/epjb/e2005-00362-5

A simple illustrative wave function with only three variational parameters is suggested to calculate the binding energy of negatively charged excitons (X-) as a function of quantum well width. The results of calculations are in agreement with experimental data for GaAs, CdTe and ZnSe quantum wells, which differ considerably in exciton and trion binding energy. The normalized X- binding energy is found to be nearly independent of electron-to-hole mass ratio for any quantum well heterostructure with conventional parameters. Its dependence on quantum well width follows an universal curve. The curve is described by a simple phenomenological equation.

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