Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

Details Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

2005-01-17

arxiv.org/abs/cond-mat/0501393v2

Phys. Rev. B 72, 035311 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

7 pages, 5 figures, revised version with substantial addition

Scientific paper

10.1103/PhysRevB.72.035311

We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.

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