Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies

Details Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies

2010-10-23

arxiv.org/abs/1010.4853v1

J. Am. Chem. Soc. 133, 941-948, (2011)

Physics

Condensed Matter

Materials Science

30 pages, 8 figures

Scientific paper

10.1021/ja108277r

Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiOx as a component. The actual switching can be the result of SiOx and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

Affiliated with

Also associated with

No associations

Rating

Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-115638