Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study

Details Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study

2010-08-18

arxiv.org/abs/1008.3029v1

Microelectronics International, Vol. 23, No.1, pp.16-18, January 2006

Physics

Condensed Matter

Materials Science

http://web.iitd.ac.in/~mamidala/

Scientific paper

In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS structure on SOI has low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.

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