Silicon intercalation into the graphene-SiC interface

Details Silicon intercalation into the graphene-SiC interface Silicon intercalation into the graphene-SiC interface

2011-11-12

arxiv.org/abs/1111.2946v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 8 figures, submitted to PRB

Scientific paper

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

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