Silencing noisy 2DEG wafers

Details Silencing noisy 2DEG wafers Silencing noisy 2DEG wafers

2009-07-16

arxiv.org/abs/0907.2903v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 5 figures Submitted to EP2DS 2009 Conf. Proceedings

Scientific paper

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.

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