Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Details Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

2010-10-15

arxiv.org/abs/1010.3169v2

Appl. Phys. Lett. 98, 012114 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3536674

Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hz bandwidth can be reached.

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