Side-gated transport in FIB-fabricated multilayered graphene nanoribbons

Details Side-gated transport in FIB-fabricated multilayered graphene nanoribbons Side-gated transport in FIB-fabricated multilayered graphene nanoribbons

2007-12-14

arxiv.org/abs/0712.2314v2

Small, 2008, 4, 716-720

Physics

Condensed Matter

Materials Science

Revised version: more detailed description of control experiments. 5 pages, 4 figures, submitted to Small (Wiley-VCH). Added s

Scientific paper

10.1002/smll.200700913

In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.

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