Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

Details Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

2008-11-21

arxiv.org/abs/0811.3575v1

Appl. Phys. Lett. 87, 192114 (2005)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2130380

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.

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