Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

Details Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

2000-07-03

arxiv.org/abs/cond-mat/0007003v1

Solid State Commun. 116, 495 (2000)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, postscript figures included

Scientific paper

10.1016/S0038-1098(00)00361-6

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.

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