Shot noise suppression in quasi one-dimensional Field Effect Transistors

Details Shot noise suppression in quasi one-dimensional Field Effect Transistors Shot noise suppression in quasi one-dimensional Field Effect Transistors

2008-12-30

arxiv.org/abs/0812.5034v2

IEEE Trans. Electron Devices, 56, 9 (2009) 2137-2143

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Changed content, 7 pages,5 figures

Scientific paper

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge carriers. In this way it extends Landauer-Buttiker approach by explicitly including the effect of Coulomb repulsion on noise. We implement the method through the self-consistent solution of the 3D Poisson and transport equations within the NEGF framework and a Monte Carlo procedure for populating injected electron states. We show that the combined effect of Pauli and Coulomb interactions reduces shot noise in strong inversion down to 23 % of the full shot noise for a gate overdrive of 0.4 V, and that neglecting the effect of Coulomb repulsion would lead to an overestimation of noise up to 180 %.

Affiliated with

Also associated with

No associations

Rating

Shot noise suppression in quasi one-dimensional Field Effect Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Shot noise suppression in quasi one-dimensional Field Effect Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shot noise suppression in quasi one-dimensional Field Effect Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-117592