Shot noise in self-assembled InAs quantum dots

Details Shot noise in self-assembled InAs quantum dots Shot noise in self-assembled InAs quantum dots

2002-07-10

arxiv.org/abs/cond-mat/0207266v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.66.161303

We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $\alpha$ with an average value of $\alpha \approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $\alpha$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.

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