Shot Noise in Negative-Differential-Conductance Devices

Details Shot Noise in Negative-Differential-Conductance Devices Shot Noise in Negative-Differential-Conductance Devices

2002-09-04

arxiv.org/abs/cond-mat/0209097v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures, submitted to Applied Physics Letters

Scientific paper

10.1063/1.1558953

We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2eI in the NDC region, that of the latter device remained 2eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.

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