Physics – Condensed Matter – Materials Science
Scientific paper
2006-05-12
J. Phys. Soc. Jpn 75(7) (2006) p. 073701
Physics
Condensed Matter
Materials Science
4 pages, 3 figures, 1 table, RevTeX4, to appear in the July issue of J. Phys. Soc. Jpn
Scientific paper
10.1143/JPSJ.75.073701
We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.
Kawasaki Masahiro
Koinuma H.
Makino Takayuki
Ohtomo Akira
Tsukazaki Atsushi
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