Shifting donor-acceptor photoluminescence in N-doped ZnO

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4 pages, 3 figures, 1 table, RevTeX4, to appear in the July issue of J. Phys. Soc. Jpn

Scientific paper

10.1143/JPSJ.75.073701

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Shifting donor-acceptor photoluminescence in N-doped ZnO does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Shifting donor-acceptor photoluminescence in N-doped ZnO, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shifting donor-acceptor photoluminescence in N-doped ZnO will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-596071

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.