Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

Details Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

2009-07-27

arxiv.org/abs/0907.4570v2

Appl. Phys. Lett. 95, 132902 (2009)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.3226654

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.

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