Sharp mobility rise as the Fermi level entering the band gap of Bi2Se3

Details Sharp mobility rise as the Fermi level entering the band gap of Bi2Se3 Sharp mobility rise as the Fermi level entering the band gap of Bi2Se3

2012-04-10

arxiv.org/abs/1204.2017v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation (<16 keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices, continuous tuning of the Fermi level from the bulk valence band to the band-gap reveals dramatic enhancement (> a factor of 10) in the field-effect mobility, which suggests suppressed backscattering expected for the Dirac fermion surface states in the gap of topological insulators.

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