Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)

Details Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111) Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)

1994-07-01

arxiv.org/abs/cond-mat/9407006v1

Physics

Condensed Matter

revtex version 3.0, 11 pages 4 figures available on request from bhupen@iopb.ernet.in - IP/BBSR/93-66

Scientific paper

10.1103/PhysRevB.51.14330

Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island edges are aligned along $Si[110]$ directions. We have observed elongated islands with aspect ratios as large as 8:1. These islands, instead of growing along three equivalent [110] directions on the Si(111) substrate, grow only along one preferential direction. This has been attributed to the vicinality of the substrate surface.

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