Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Details Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

2000-09-19

arxiv.org/abs/cond-mat/0009272v1

Appl. Phys. Lett. 77, 3845 (2000)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 3 figures

Scientific paper

10.1063/1.1331090

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf-SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf-SET, displacement sensitivities of $10^{-6} {\rm\AA}/\sqrt{\rm Hz}$ may be possible.

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