Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides

Details Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides

2012-03-30

arxiv.org/abs/1203.6820v1

Physics

Condensed Matter

Materials Science

Scientific paper

Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo an universal reversible semiconductor to metal (S-M) transition at a critical pressure. S-M transition is attributed to lifting the degeneracy of the bands at fermi level caused by inter-layer interactions via charge transfer from metal to chalcogens. The ability to tune the band gap of TMDs in a controlled fashion over a wide range of energy, opens-up possibility for its usage in a range of applications.

Affiliated with

Also associated with

No associations

Rating

Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-64625