Self - Organized Si Dots On Ge Substrates

Details Self - Organized Si Dots On Ge Substrates Self - Organized Si Dots On Ge Substrates

2006-08-30

arxiv.org/abs/cond-mat/0608660v1

Physics

Condensed Matter

Materials Science

presented 26.July 2006 at ICPS 2006 Vienna

Scientific paper

10.1063/1.2729783

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.

Affiliated with

Also associated with

No associations

Rating

Self - Organized Si Dots On Ge Substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Self - Organized Si Dots On Ge Substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self - Organized Si Dots On Ge Substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-73690